Turgunov N.A.; Sobirova Sh.A.

Authors

Turgunov N.A. Doctor of Physical and Mathematical Sciences, Professor, Research Institute of Physics of Semiconductors and Microelectronics at the National University of Uzbekistan, Tashkent, Republic of Uzbekistan
Sobirova Sh.A. Research Intern, Research Institute of Physics of Semiconductors and Microelectronics at the National University of Uzbekistan, Tashkent, Republic of Uzbekistan

Keywords:

Nickel, accumulations, silicon, thermal annealing

Abstract

In this article, the effect of thermal annealing on the electrical conductivity of nickel-doped silicon single crystals is investigated. The results of analyses of morphological parameters of impurity accumulations of nickel under the influence of heat treatment, obtained using the method of electron microscopy, are presented. It is revealed that under the influence of thermal annealing at T=1173 K, impurity accumulations of nickel in silicon decay.

References

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Decay Of Ni Impurity Accumulations In Si Under The Influence Of Thermal Annealing

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